Invention Grant
- Patent Title: SRAM cell for interleaved wordline scheme
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Application No.: US16991366Application Date: 2020-08-12
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Publication No.: US10971217B2Publication Date: 2021-04-06
- Inventor: Hidehiro Fujiwara , Hung-Jen Liao , Hsien-Yu Pan , Yen-Huei Chen , Mahmut Sinangil
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G11C11/412
- IPC: G11C11/412 ; H01L27/11 ; G11C11/419 ; G11C11/418 ; G11C8/14

Abstract:
Some embodiments relate to an SRAM cell layout including upper and lower cell edges and left and right cell edges. A first power rail extends generally in parallel with and lies along the left cell edge or the right cell edge. The first power rail is coupled to a first power supply. A second power rail extends generally in parallel with the first power rail and is arranged equidistantly between the left and right cell edges. A first bitline extends in parallel with the first power rail and the second power rail and is arranged to a first side of the second power rail. A second bitline, which is complementary to the first bitline, extends in parallel with the first power rail and the second power rail and is arranged to a second side of the second power rail.
Public/Granted literature
- US20200372951A1 SRAM CELL FOR INTERLEAVED WORDLINE SCHEME Public/Granted day:2020-11-26
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