Invention Grant
- Patent Title: Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
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Application No.: US15191956Application Date: 2016-06-24
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Publication No.: US10971372B2Publication Date: 2021-04-06
- Inventor: Subhadeep Kal , Nihar Mohanty , Angelique D. Raley , Aelan Mosden , Scott W. Lefevre
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/67
Abstract:
A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.
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