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    GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING ARC OR SILICON OXYNITRIDE TO DIFFERENT FILMS OR MASKS
    1.
    发明申请
    GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING ARC OR SILICON OXYNITRIDE TO DIFFERENT FILMS OR MASKS 审中-公开
    具有可控硅选择性的气相相位选择性不同的薄膜或掩模的硅或硅氧化物

    公开(公告)号：US20160379842A1

    公开(公告)日：2016-12-29

    申请号：US15191956

    申请日：2016-06-24

    Applicant: Tokyo Electron Limited

    Inventor： Subhadeep Kal ,  Nihar Mohanty ,  Angelique D. Raley ,  Aelan Mosden ,  Scott W. Lefevre

    IPC: H01L21/311 ,  H01L21/67

    CPC classification number: H01L21/31116 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248

    Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.

    Abstract translation: 描述了用于干燥去除微电子工件上的材料的方法。 该方法包括接收具有暴露由硅构成的目标层的表面和（1）有机材料或（2）氧和氮两者的表面的工件，并且从工件中选择性地去除目标层的至少一部分。 选择性去除包括将工件的表面暴露于含有N，H和F的化学环境处于第一设定点温度以化学改变目标层的表面区域，然后将工件的温度升高到第二设定点 温度以去除目标层的化学处理的表面区域。

    Gas phase etching system and method
    2.
    发明授权
    Gas phase etching system and method 有权

    公开(公告)号：US10580660B2

    公开(公告)日：2020-03-03

    申请号：US15191963

    申请日：2016-06-24

    Applicant: Tokyo Electron Limited

    Inventor： Subhadeep Kal ,  Nihar Mohanty ,  Angelique D. Raley ,  Aelan Mosden ,  Scott W. Lefevre

    IPC: H01L21/311 ,  H01L21/67

    Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.

    GAS PHASE ETCHING SYSTEM AND METHOD
    4.
    发明申请
    GAS PHASE ETCHING SYSTEM AND METHOD 审中-公开
    气相相位蚀刻系统及方法

    公开(公告)号：US20160379835A1

    公开(公告)日：2016-12-29

    申请号：US15191963

    申请日：2016-06-24

    Applicant: Tokyo Electron Limited

    Inventor： Subhadeep Kal ,  Nihar Mohanty ,  Angelique D. Raley ,  Aelan Mosden ,  Scott W. Lefevre

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308

    CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/67069

    Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.

    Abstract translation: 描述了用于干移除微电子工件上的材料的方法和系统。 该方法包括接收具有暴露目标层至少部分去除的表面的工件，将工件放置在干燥的非等离子体蚀刻室中的工件保持器上，并且将目标层的至少一部分从 工件。 选择性去除包括操作干燥的非等离子体蚀刻室以执行以下操作：将工件的表面暴露于在35摄氏度至100摄氏度的范围内的第一设定点温度下的化学环境，以化学改变 目标层的表面区域，然后将工件的温度升高到等于或高于100℃的第二设定点温度，以去除目标层的经化学处理的表面区域。

    Gas phase etching system and method
    6.
    发明授权
    Gas phase etching system and method 有权

    公开(公告)号：US11380554B2

    公开(公告)日：2022-07-05

    申请号：US16787867

    申请日：2020-02-11

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Subhadeep Kal ,  Nihar Mohanty ,  Angelique D. Raley ,  Aelan Mosden ,  Scott W. Lefevre

    IPC: H01L21/67 ,  H01J37/32 ,  H01L21/311

    Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.

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