Invention Grant
- Patent Title: Oxygen reservoir for low threshold voltage P-type MOSFET
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Application No.: US16442047Application Date: 2019-06-14
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Publication No.: US10971593B2Publication Date: 2021-04-06
- Inventor: Takashi Ando , Choonghyun Lee , Jingyun Zhang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Lou Percello, Attorney, PLLC
- Agent L. Jeffrey Kelly
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/49 ; H01L29/06 ; H01L21/311 ; H01L21/28 ; H01L21/02
Abstract:
A p-type FinFET has an oxygen reservoir disposed on the gate stack. The oxygen reservoir provides an oxygen rich environment during processing steps of manufacturing the device to help the work function metal retain or obtain oxygen to maintain or increase the work function and keep the Vth of the device lower.
Information query
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