Invention Grant
- Patent Title: Highly efficient gallium nitride based light emitting diodes via surface roughening
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Application No.: US16561366Application Date: 2019-09-05
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Publication No.: US10985293B2Publication Date: 2021-04-20
- Inventor: Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
- Applicant: The Regents of the University of California , Japan Science and Technology Agency
- Applicant Address: US CA Oakland; JP Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland; JP Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/60 ; H01L33/32 ; H01L33/00 ; H01L33/50 ; H01L33/54 ; H01L33/06
Abstract:
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
Public/Granted literature
- US20200212258A1 HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING Public/Granted day:2020-07-02
Information query
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