Invention Grant
- Patent Title: Isolation structure for bond pad structure
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Application No.: US16532781Application Date: 2019-08-06
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Publication No.: US10991667B2Publication Date: 2021-04-27
- Inventor: Sin-Yao Huang , Jeng-Shyan Lin , Shih-Pei Chou , Tzu-Hsuan Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L27/146

Abstract:
Various embodiments of the present disclosure are directed towards a semiconductor device structure including a bond pad isolation structure. A semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. A bond pad extends through the semiconductor substrate. The bond pad isolation structure is disposed within the semiconductor substrate. The bond pad isolation structure extends from the front-side surface to the back-side surface of the semiconductor substrate and continuously extends around the bond pad.
Public/Granted literature
- US20210043593A1 ISOLATION STRUCTURE FOR BOND PAD STRUCTURE Public/Granted day:2021-02-11
Information query
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