公开(公告)号：US11004886B2

公开(公告)日：2021-05-11

申请号：US15996636

申请日：2018-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Horng Huei Tseng ,  Chao-Hsiung Wang ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Tzu-Hsuan Hsu ,  Yung-Lung Hsu

IPC: H01L27/146

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.

公开(公告)号：US09978805B2

公开(公告)日：2018-05-22

申请号：US15472814

申请日：2017-03-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tzu-Jui Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Yuichiro Yamashita

IPC: H01L21/8234 ,  H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: Methods for forming image sensor structures are provided. The method includes forming an isolation structure in a substrate and forming a first light sensing region and a second light sensing region. The method further includes forming a first gate structure and a second gate structure, and the first gate structure and the second gate structure are positioned at a front side of the substrate. The method further includes forming a first source/drain structure adjacent to the first gate structure and a second source/drain structure adjacent to the second gate structure and forming an interlayer dielectric layer over the front side of the substrate. The method further includes forming a contact trench through the interlayer dielectric layer and forming a contact in the contact trench.

公开(公告)号：US09853082B2

公开(公告)日：2017-12-26

申请号：US15144998

申请日：2016-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ying Chen ,  Dun-Nian Yaung ,  Chen-Jong Wang ,  Tzu-Hsuan Hsu

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689

Abstract: A color filter array and micro-lens structure for imaging system and method of forming the color filter array and micro-lens structure. A micro-lens material is used to fill the space between the color filters to re-direct incident radiation, and form a convex micro-lens structure above a top surface of the color filters.

公开(公告)号：US20170229494A1

公开(公告)日：2017-08-10

申请号：US15016502

申请日：2016-02-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Hsuan Hsu ,  Ching-Chun Wang ,  Chien-Hsien Tseng ,  Chen-Jong Wang ,  Feng-Chi Hung ,  Wen-I Hsu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14678 ,  H01L27/14685 ,  H01L27/14687

Abstract: A backside illuminated (BSI) image sensor for biased backside deep trench isolation (BDTI) and/or biased backside shielding is provided. A photodetector is arranged in a semiconductor substrate, laterally adjacent to a peripheral opening in the semiconductor substrate. An interconnect structure is arranged under the semiconductor substrate. A pad structure is arranged in the peripheral opening, and protrudes through a lower surface of the peripheral opening to the interconnect structure. A conductive layer is electrically coupled to the pad structure, and extends laterally towards the photodetector from over the pad structure. A method for manufacturing the BSI image sensor is also provided.

公开(公告)号：US20220328535A1

公开(公告)日：2022-10-13

申请号：US17372866

申请日：2021-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Wei-Chieh Chiang ,  Keng-Yu Chou ,  Tzu-Hsuan Hsu

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

公开(公告)号：US20210272989A1

公开(公告)日：2021-09-02

申请号：US17324373

申请日：2021-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jeng-Shyan Lin ,  Shu-Ting Tsai ,  Tzu-Hsuan Hsu

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a photodetector disposed in a semiconductor substrate. An interlayer dielectric (ILD) structure is disposed on a first side of the semiconductor substrate. A storage node is disposed in the semiconductor substrate and spaced from the photodetector, where the storage node is spaced from the first side by a first distance. A first isolation structure is disposed in the semiconductor substrate and between the photodetector and the storage node, where the first isolation structure extends into the semiconductor substrate from a second side of the semiconductor substrate that is opposite the first side, and where the first isolation structure is spaced from the first side by a second distance that is less than the first distance.

公开(公告)号：US10991667B2

公开(公告)日：2021-04-27

申请号：US16532781

申请日：2019-08-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sin-Yao Huang ,  Jeng-Shyan Lin ,  Shih-Pei Chou ,  Tzu-Hsuan Hsu

IPC: H01L23/00 ,  H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device structure including a bond pad isolation structure. A semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. A bond pad extends through the semiconductor substrate. The bond pad isolation structure is disposed within the semiconductor substrate. The bond pad isolation structure extends from the front-side surface to the back-side surface of the semiconductor substrate and continuously extends around the bond pad.

公开(公告)号：US20210043593A1

公开(公告)日：2021-02-11

申请号：US16532781

申请日：2019-08-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sin-Yao Huang ,  Jeng-Shyan Lin ,  Shih-Pei Chou ,  Tzu-Hsuan Hsu

IPC: H01L23/00 ,  H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device structure including a bond pad isolation structure. A semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. A bond pad extends through the semiconductor substrate. The bond pad isolation structure is disposed within the semiconductor substrate. The bond pad isolation structure extends from the front-side surface to the back-side surface of the semiconductor substrate and continuously extends around the bond pad.

公开(公告)号：US09812482B2

公开(公告)日：2017-11-07

申请号：US14980225

申请日：2015-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Hsun-Ying Huang ,  Tzu-Hsuan Hsu

IPC: H01L31/062 ,  H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469

Abstract: A frontside illuminated (FSI) image sensor with a reflector is provided. A photodetector is buried in a sensor substrate. A support substrate is arranged under and bonded to the sensor substrate. The reflector is arranged under the photodetector, between the sensor and support substrates, and is configured to reflect incident radiation towards the photodetector. A method for manufacturing the FSI image sensor and the reflector is also provided.

公开(公告)号：US20170309675A1

公开(公告)日：2017-10-26

申请号：US15647968

申请日：2017-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Min Lin ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Chun-Ming Su ,  Tzu-Hsuan Hsu

IPC: H01L27/146 ,  H04N9/04

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H04N9/045

Abstract: A device includes a semiconductor substrate, a plurality of micro-lenses disposed on the substrate, each micro-lens being configured to direct light radiation to a layer beneath the plurality of micro-lenses. The device further includes a transparent layer positioned between the plurality of micro-lenses and the substrate, the transparent layer comprising a structure that is configured to block light radiation that is traveling towards a region between adjacent micro-lenses, wherein the structure and the transparent material are coplanar at respective top surfaces and bottom surfaces thereof.