Invention Grant
- Patent Title: Magnetostrictive stack and corresponding bit-cell
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Application No.: US16329721Application Date: 2016-09-30
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Publication No.: US10998495B2Publication Date: 2021-05-04
- Inventor: Chia-Ching Lin , Sasikanth Manipatruni , Dmitri E. Nikonov , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2016/054666 WO 20160930
- International Announcement: WO2018/063286 WO 20180405
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L41/187 ; H01L41/193 ; H01L41/20 ; G11C11/16 ; H01L41/00 ; H01L27/22 ; H01L43/08 ; H01F10/32 ; H01L43/02 ; H01F10/12
Abstract:
An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; and a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; a magnetoelectric region being adjacent to the FM and PZe regions; a first electrode adjacent to the FM and PZe regions; a second electrode adjacent to the magnetoelectric region; a spin orbit coupling (SOC) region adjacent to the magnetoelectric region; and a third electrode adjacent to the SOC region.
Public/Granted literature
- US20190198754A1 MAGNETOSTRICTIVE STACK AND CORRESPONDING BIT-CELL Public/Granted day:2019-06-27
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