Invention Grant
- Patent Title: Method for monitoring gas in wafer processing system
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Application No.: US16127919Application Date: 2018-09-11
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Publication No.: US11004709B2Publication Date: 2021-05-11
- Inventor: Wen-Chieh Hsieh , Su-Yu Yeh , Ko-Bin Kao , Chia-Hung Chung , Li-Jen Wu , Chun-Yu Chen , Hung-Ming Chen , Yong-Ting Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G01N33/00 ; H01L21/673 ; B05C15/00

Abstract:
A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.
Public/Granted literature
- US20190157124A1 METHOD FOR MONITORING GAS IN WAFER PROCESSING SYSTEM Public/Granted day:2019-05-23
Information query
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