公开(公告)号：US11587802B2

公开(公告)日：2023-02-21

申请号：US16749286

申请日：2020-01-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Che Chen ,  Wen-Tane Liao ,  Ming-Hsien Lin ,  Wei-Chen Liao ,  Hai-Lin Lee ,  Chun-Yu Chen

IPC: H01L21/67

Abstract: A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.

公开(公告)号：US11004709B2

公开(公告)日：2021-05-11

申请号：US16127919

申请日：2018-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chieh Hsieh ,  Su-Yu Yeh ,  Ko-Bin Kao ,  Chia-Hung Chung ,  Li-Jen Wu ,  Chun-Yu Chen ,  Hung-Ming Chen ,  Yong-Ting Wu

IPC: H01L21/67 ,  G01N33/00 ,  H01L21/673 ,  B05C15/00

Abstract: A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.

公开(公告)号：US20210066490A1

公开(公告)日：2021-03-04

申请号：US16559343

申请日：2019-09-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chansyun David Yang ,  Han-Yu Lin ,  Chun-Yu Chen ,  Chih-Ching Wang ,  Fang-Wei Lee ,  Tze-Chung LIN ,  Li-Te LIN ,  Gwan-Sin Chang ,  Pinyen LIN

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/66

Abstract: The current disclosure describes techniques for forming a gate-all-around device where semiconductor layers are released by etching out the buffer layers that are vertically stacked between semiconductor layers in an alternating manner. The buffer layers stacked at different vertical levels include different material compositions, which bring about different etch rates with respect to an etchant that is used to remove at least partially the buffer layers to release the semiconductor layers.

公开(公告)号：US11201243B2

公开(公告)日：2021-12-14

申请号：US16559343

申请日：2019-09-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chansyun David Yang ,  Han-Yu Lin ,  Chun-Yu Chen ,  Chih-Ching Wang ,  Fang-Wei Lee ,  Tze-Chung Lin ,  Li-Te Lin ,  Gwan-Sin Chang ,  Pinyen Lin

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/417 ,  H01L29/06

Abstract: The current disclosure describes techniques for forming a gate-all-around device where semiconductor layers are released by etching out the buffer layers that are vertically stacked between semiconductor layers in an alternating manner. The buffer layers stacked at different vertical levels include different material compositions, which bring about different etch rates with respect to an etchant that is used to remove at least partially the buffer layers to release the semiconductor layers.