Invention Grant
- Patent Title: Silicon nitride etching composition and method
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Application No.: US16681449Application Date: 2019-11-12
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Publication No.: US11053440B2Publication Date: 2021-07-06
- Inventor: Steven M. Bilodeau , SeongJin Hong , Hsing-Chen Wu , Min-Chieh Yang , Emanuel I. Cooper
- Applicant: ENTEGRIS, INC.
- Applicant Address: US MA Billerica
- Assignee: ENTEGRIS, INC.
- Current Assignee: ENTEGRIS, INC.
- Current Assignee Address: US MA Billerica
- Agency: Entegris, Inc.
- Main IPC: C09K13/06
- IPC: C09K13/06 ; H01L21/311
Abstract:
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
Public/Granted literature
- US20200157423A1 SILICON NITRIDE ETCHING COMPOSITION AND METHOD Public/Granted day:2020-05-21
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