公开(公告)号：US11788007B2

公开(公告)日：2023-10-17

申请号：US17389879

申请日：2021-07-30

Applicant: ENTEGRIS, INC.

Inventor： Hsing-Chen Wu ,  Emanuel I. Cooper ,  Min-Chieh Yang

IPC: C09K13/04 ,  H01L21/311 ,  C09K13/06 ,  C09K13/10 ,  H10B69/00

CPC classification number: C09K13/04 ,  C09K13/06 ,  C09K13/10 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31133 ,  H10B69/00

Abstract: Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.

公开(公告)号：US11697767B2

公开(公告)日：2023-07-11

申请号：US17341138

申请日：2021-06-07

Applicant: ENTEGRIS, INC.

Inventor： Steven Michael Bilodeau ,  SeongJin Hong ,  Hsing-Chen Wu ,  Min-Chieh Yang ,  Emanuel I. Cooper

IPC: C09K13/06 ,  H01L21/311 ,  C09K13/04 ,  C09K13/00 ,  H01L21/3213 ,  C09K13/08 ,  H01L21/306 ,  C23F1/14

CPC classification number: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C23F1/14 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/32134

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：US20190074188A1

公开(公告)日：2019-03-07

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US10340150B2

公开(公告)日：2019-07-02

申请号：US15103593

申请日：2014-12-16

Applicant: Entegris, Inc. ,  ATMI TAIWAN CO., LTD.

Inventor： Steven Bilodeau ,  Jeffrey A. Barnes ,  Emanuel Cooper ,  Hsing-Chen Wu ,  Sheng-Hung Tu ,  Thomas Parson ,  Min-chieh Yang

IPC: H01L21/3213 ,  C09K13/00 ,  H01L21/3205 ,  H01L29/16 ,  H01L29/26 ,  H01L29/45 ,  C09G1/04 ,  H01L21/24

Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

公开(公告)号：US20180240674A1

公开(公告)日：2018-08-23

申请号：US15752640

申请日：2016-08-12

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Hsing-Chen Wu ,  Min-Chieh Yang

IPC: H01L21/28 ,  H01L21/762 ,  H01L21/02

CPC classification number: H01L21/28255 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/762

Abstract: Compositions useful for the passivation of germanium-containing materials on a microelectronic device having same thereon.

公开(公告)号：US12129418B2

公开(公告)日：2024-10-29

申请号：US17743080

申请日：2022-05-12

Applicant: ENTEGRIS, INC.

Inventor： Hsing-Chen Wu ,  Min-Chieh Yang ,  Ming-Chi Liao ,  Wen Hua Tai ,  Wei-Ling Lan

IPC: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  H01L21/0217 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31105 ,  H01L21/32134

Abstract: The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.

公开(公告)号：US10651045B2

公开(公告)日：2020-05-12

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  C30B33/10

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US20240337940A1

公开(公告)日：2024-10-10

申请号：US18624231

申请日：2024-04-02

Applicant: ENTEGRIS, INC.

Inventor： Hsing-Chen Wu ,  Eri Hirahara ,  Ming-Chi Liao ,  Min-Chieh Yang

IPC: G03F7/039 ,  C08F297/02 ,  G03F7/00 ,  G03F7/32

CPC classification number: G03F7/0397 ,  C08F297/026 ,  G03F7/32 ,  G03F7/70033

Abstract: Solutions for selective removal of polymer chains from layers of block copolymers and related methods are provided. A layer of a block copolymer comprises a plurality of polymer domains, each of the polymer domains comprise a first region and a second region. The first region comprises first polymer chains. The second region comprises second polymer chains. The solution is configured to remove a greater proportion of the second polymer chains than the first polymer chains, sufficient to increase or rectify at least one dimension of the plurality of polymer domains.

公开(公告)号：US20220363990A1

公开(公告)日：2022-11-17

申请号：US17743080

申请日：2022-05-12

Applicant: ENTEGRIS, INC.

Inventor： Hsing-Chen Wu ,  Min-Chieh Yang ,  Ming-Chi Liao ,  Wen Hua Tai ,  Wei-Ling Lan

IPC: C09K13/06 ,  H01L21/306

Abstract: The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.

公开(公告)号：US11152219B2

公开(公告)日：2021-10-19

申请号：US16443492

申请日：2019-06-17

Applicant: ENTEGRIS, INC.

Inventor： Chieh Ju Wang ,  Hsing-Chen Wu ,  Chia-Jung Hsu

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/306 ,  C09K13/08 ,  C09K13/06

Abstract: A method of selectively removing aluminium oxide or nitride material from a microelectronic substrate, the method comprising contacting the material with an aqueous etching composition comprising: an etchant comprising a source of fluoride; and a metal corrosion inhibitor; wherein the composition has a pH in the range of from 3 to 8. Aqueous etching compositions and uses are also described.