公开(公告)号：US12012540B2

公开(公告)日：2024-06-18

申请号：US17749868

申请日：2022-05-20

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes ,  Juhee Yeo

IPC: C09K13/06 ,  B81C1/00 ,  C09K13/04 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/06 ,  B81C1/00539 ,  C09K13/04 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/32134

Abstract: The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.

公开(公告)号：US20230407176A1

公开(公告)日：2023-12-21

申请号：US18211220

申请日：2023-06-16

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Daniela White

IPC: C09K13/00 ,  H01L21/306 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/30604 ,  H01L21/32134

Abstract: The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfactant, and are useful in the etching of polysilicon in general, and in particular in both the operation of polysilicon trim as well as polysilicon exhume. The utilization of an added oxidizing agent was found to reduce selectivity of silicon etching based on the silicon crystal orientation, which was found to reduce roughness and the presence of residual silicon residues, such as silicon (111) residues after the etching step.

公开(公告)号：US11530356B2

公开(公告)日：2022-12-20

申请号：US17388990

申请日：2021-07-29

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Emanuel I. Cooper ,  Daniela White

IPC: C09K13/06 ,  H01L21/311 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213 ,  C09K13/08

Abstract: Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.

公开(公告)号：US20220389314A1

公开(公告)日：2022-12-08

申请号：US17749868

申请日：2022-05-20

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes ,  Juhee Yeo

IPC: C09K13/06 ,  H01L21/306

Abstract: The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.

公开(公告)号：US20160225615A1

公开(公告)日：2016-08-04

申请号：US15093865

申请日：2016-04-08

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

Abstract translation: 描述了一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底，并填充了其整个整体质量基本上无空隙特征和基本均匀密度的二氧化硅。 还描述了制造半导体产品的方法，其涉及使用特定的硅前体组合物，用于在沟槽中形成基本上无空隙且基本均匀的密度二氧化硅材料。 前体填充组合物可以包括硅和锗，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。 可以在前体填充组合物中使用抑制剂组分，以消除或最小化固化沟槽填充材料中的接缝形成。

公开(公告)号：US20240150653A1

公开(公告)日：2024-05-09

申请号：US18376226

申请日：2023-10-03

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes

IPC: C09K13/06

CPC classification number: C09K13/06

Abstract: Etchant compositions for selective etching of silicon nitride in the presence of silicon oxide and polysilicon are provided. The etchant compositions may achieve passivation of at least one of silicon oxide, polysilicon, or any combination thereof, while selectively etching silicon nitride, in a single step by applying the etchant composition to a substrate. The etchant compositions may comprise at least 60% by weight of phosphoric acid based on a total weight of the etchant composition; at least 1% by weight of water based on the total weight of the etchant composition; and no greater than 2% by weight of a metal oxidizer based on the total weight of the etchant composition.

公开(公告)号：US20240096635A1

公开(公告)日：2024-03-21

申请号：US18525636

申请日：2023-11-30

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau

IPC: H01L21/306 ,  C09K13/06 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L21/30604 ,  C09K13/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775

Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

公开(公告)号：US11875997B2

公开(公告)日：2024-01-16

申请号：US15951030

申请日：2018-04-11

Applicant: Entegris, Inc.

Inventor： Steven M. Bilodeau

IPC: H01L21/306 ,  C09K13/06 ,  H01L21/02 ,  H01L29/775 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L21/30604 ,  C09K13/06 ,  H01L21/0245 ,  H01L21/02381 ,  H01L21/02532 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775

Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

公开(公告)号：US11365351B2

公开(公告)日：2022-06-21

申请号：US17066152

申请日：2020-10-08

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel I. Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US20230365863A1

公开(公告)日：2023-11-16

申请号：US18144502

申请日：2023-05-08

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes

IPC: C09K13/06 ,  H01L21/311

CPC classification number: C09K13/06 ,  H01L21/31111

Abstract: Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passivation step and a silicon nitride etching step, as more fully described below. The combination of the two steps was found to greatly improve the selectivity of the silicon nitride etching operation in the presence of polysilicon.