Invention Grant
- Patent Title: Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element
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Application No.: US16479153Application Date: 2017-01-18
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Publication No.: US11081641B2Publication Date: 2021-08-03
- Inventor: Hiroaki Honjo , Tetsuo Endoh , Shoji Ikeda , Hideo Sato , Hideo Ohno
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Sendai
- Assignee: TOHOKU UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY
- Current Assignee Address: JP Sendai
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- International Application: PCT/JP2017/001617 WO 20170118
- International Announcement: WO2018/134929 WO 20180726
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/10 ; H01L43/12 ; H01L27/22 ; G11C11/16 ; H01L27/12
Abstract:
The present invention provides a magnetoresistance effect element which has a high thermal stability factor Δ and in which a magnetization direction of a recording layer is a perpendicular direction with respect to a film surface, and a magnetic memory including the same. Magnetic layers of a recording layer of the magnetoresistance effect element are divided into at least two, and an Fe composition with respect to a sum total of atomic fractions of magnetic elements in each magnetic layer is changed before stacking the magnetic layers.
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