公开(公告)号：US11770981B2

公开(公告)日：2023-09-26

申请号：US17043404

申请日：2019-02-19

Applicant: TOHOKU UNIVERSITY

Inventor： Hiroaki Honjo ,  Tetsuo Endoh ,  Shoji Ikeda ,  Hideo Sato ,  Koichi Nishioka

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/80 ,  H10B61/00 ,  H10N50/85

Abstract: Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling.
A first magnetic layer (3) and a second magnetic layer (5) of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t1 (nm) of the first magnetic layer (3), and a film thickness t2 (nm) of the second magnetic layer (5) satisfy relationships D

公开(公告)号：US11563169B2

公开(公告)日：2023-01-24

申请号：US15776902

申请日：2016-11-18

Applicant: TOHOKU UNIVERSITY

Inventor： Hideo Sato ,  Yoshihisa Horikawa ,  Shunsuke Fukami ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Hideo Ohno ,  Tetsuo Endoh ,  Hiroaki Honjo

IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

Abstract: A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.

公开(公告)号：US10658572B2

公开(公告)日：2020-05-19

申请号：US16179461

申请日：2018-11-02

Applicant: TOHOKU UNIVERSITY

Inventor： Hideo Sato ,  Shoji Ikeda ,  Mathias Bersweiler ,  Hiroaki Honjo ,  Kyota Watanabe ,  Shunsuke Fukami ,  Fumihiro Matsukura ,  Kenchi Ito ,  Masaaki Niwa ,  Tetsuo Endoh ,  Hideo Ohno

IPC: H01L43/08 ,  H01L27/22 ,  H01F10/16 ,  H01F10/32 ,  H01L27/105 ,  H01L29/82 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.

公开(公告)号：US20190189917A1

公开(公告)日：2019-06-20

申请号：US16328852

申请日：2017-03-21

Applicant: TOHOKU UNIVERSITY

Inventor： Hiroaki Honjo ,  Tetsuo Endoh ,  Shoji Ikeda ,  Hideo Sato ,  Hideo Ohno

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic tunnel junction element includes, in a following stack order, an underlayer formed of a metal material, a fixed layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, or alternatively, the magnetic tunnel junction element includes, in a following stack order, a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, an underlayer formed of a metal material, and a fixed layer formed of a ferromagnetic body, wherein the fixed layer is formed and stacked after performing plasma treatment to a surface of the underlayer having been formed.

公开(公告)号：US11963458B2

公开(公告)日：2024-04-16

申请号：US16971797

申请日：2019-03-11

Applicant: TOHOKU UNIVERSITY

Inventor： Koichi Nishioka ,  Tetsuo Endoh ,  Shoji Ikeda ,  Hiroaki Honjo ,  Hideo Sato ,  Sadahiko Miura

IPC: H01L27/22 ,  G11C11/16 ,  H01L27/105 ,  H01L29/82 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01L27/105 ,  H01L29/82 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element.
The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).

公开(公告)号：US10833256B2

公开(公告)日：2020-11-10

申请号：US16328852

申请日：2017-03-21

Applicant: TOHOKU UNIVERSITY

Inventor： Hiroaki Honjo ,  Tetsuo Endoh ,  Shoji Ikeda ,  Hideo Sato ,  Hideo Ohno

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

Abstract: A magnetic tunnel junction element includes, in a following stack order, an underlayer formed of a metal material, a fixed layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, or alternatively, the magnetic tunnel junction element includes, in a following stack order, a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, an underlayer formed of a metal material, and a fixed layer formed of a ferromagnetic body, wherein the fixed layer is formed and stacked after performing plasma treatment to a surface of the underlayer having been formed.

公开(公告)号：US20190019944A1

公开(公告)日：2019-01-17

申请号：US15776902

申请日：2016-11-18

Applicant: TOHOKU UNIVERSITY

Inventor： Hideo Sato ,  Yoshihisa Horikawa ,  Shunsuke Fukami ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Hideo Ohno ,  Tetsuo Endoh ,  Hiroaki Honjo

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.

公开(公告)号：US11462253B2

公开(公告)日：2022-10-04

申请号：US16499753

申请日：2017-12-28

Applicant: TOHOKU UNIVERSITY

Inventor： Koichi Nishioka ,  Tetsuo Endoh ,  Shoji Ikeda ,  Hiroaki Honjo ,  Hideo Sato ,  Hideo Ohno

IPC: H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22

Abstract: Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor Δ, and a magnetic memory.
A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

公开(公告)号：US11258006B2

公开(公告)日：2022-02-22

申请号：US16996559

申请日：2020-08-18

Applicant: TOHOKU UNIVERSITY

Inventor： Tetsuo Endoh ,  Masaaki Niwa ,  Hiroaki Honjo ,  Hideo Sato ,  Shoji Ikeda ,  Toshinari Watanabe

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory. The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7×1030 atoms/m2 or more in a position of 2 nm inside from an outer circumferential end of the columnar stack.

公开(公告)号：US20210091304A1

公开(公告)日：2021-03-25

申请号：US16996559

申请日：2020-08-18

Applicant: TOHOKU UNIVERSITY

Inventor： Tetsuo Endoh ,  Masaaki Niwa ,  Hiroaki Honjo ,  Hideo Sato ,  Shoji Ikeda ,  Toshinari Watanabe

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: [Problem] Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory.
[Means for Resolution] The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film (a second insulating film 20) which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7×1030 atoms/m2 or more in a position of 2 nm inside from an outer circumferential end of the columnar stack.