发明授权
- 专利标题： Structure and formation method of semiconductor device structure with gate stack
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申请号： US16595100申请日： 2019-10-07
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公开(公告)号： US11101344B2公开(公告)日： 2021-08-24
- 发明人: Chih-Wei Lin , Chih-Lin Wang , Kang-Min Kuo
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/78 ; H01L21/28 ; H01L29/66
摘要：
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a gate dielectric layer and a work function layer. The gate dielectric layer is between the semiconductor substrate and the work function layer. The semiconductor device structure also includes a halogen source layer. The gate dielectric layer is between the semiconductor substrate and the halogen source layer.
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