- Patent Title: Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction
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Application No.: US16074135Application Date: 2017-01-31
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Publication No.: US11105867B2Publication Date: 2021-08-31
- Inventor: Hiroaki Sukegawa , Thomas Scheike , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono , Kouichiro Inomata
- Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Applicant Address: JP Ibaraki
- Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee Address: JP Ibaraki
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2016-018432 20160202
- International Application: PCT/JP2017/003425 WO 20170131
- International Announcement: WO2017/135251 WO 20170810
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G01R33/09 ; G11B5/39 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; H01L43/12
Abstract:
The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1−xAlx (0
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