公开(公告)号：US11374168B2

公开(公告)日：2022-06-28

申请号：US16640429

申请日：2018-08-29

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Thomas Scheike ,  Seiji Mitani

IPC: H01L43/10 ,  G01R33/09 ,  H01L43/12 ,  H01L27/22 ,  H01F10/14 ,  H01L43/08

Abstract: The present invention provides a perpendicularly magnetized film structure exhibiting high interface-induced magnetic anisotropy by utilizing a combination of an alloy comprising Fe as a main component and MgAl2O4 as a basic configuration.

公开(公告)号：US11105867B2

公开(公告)日：2021-08-31

申请号：US16074135

申请日：2017-01-31

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Thomas Scheike ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Kazuhiro Hono ,  Kouichiro Inomata

IPC: G11C11/16 ,  G01R33/09 ,  G11B5/39 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1−xAlx (0