Various embodiments of the present disclosure are directed towards a memory cell including a first ferromagnetic layer and a second ferromagnetic layer. A bottom electrode via overlies a substrate. A bottom electrode overlies the bottom electrode via. A data storage layer overlies the bottom electrode. The first ferromagnetic layer overlies the data storage layer and has a first magnetization pointing in a first direction. The second ferromagnetic layer overlies the bottom electrode via and has a second magnetization pointing in a second direction orthogonal to the first direct.