Invention Grant
- Patent Title: Quantum well stacks for quantum dot devices
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Application No.: US16648442Application Date: 2017-12-17
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Publication No.: US11114530B2Publication Date: 2021-09-07
- Inventor: Nicole K. Thomas , James S. Clarke , Jessica M. Torres , Ravi Pillarisetty , Kanwaljit Singh , Payam Amin , Hubert C. George , Jeanette M. Roberts , Roman Caudillo , David J. Michalak , Zachary R. Yoscovits , Lester Lampert
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Patent Capital Group
- International Application: PCT/US2017/066894 WO 20171217
- International Announcement: WO2019/117977 WO 20190620
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L29/82

Abstract:
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.
Public/Granted literature
- US20210036110A1 QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES Public/Granted day:2021-02-04
Information query
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