- 专利标题: Impedance calibration circuit and memory device including the same
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申请号: US17021728申请日: 2020-09-15
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公开(公告)号: US11115021B2公开(公告)日: 2021-09-07
- 发明人: Tongsung Kim , Youngmin Jo , Jungjune Park , Jindo Byun , Dongho Shin , Jeongdon Ihm
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Muir Patent Law, PLLC
- 优先权: KR10-2020-0013730 20200205
- 主分类号: H03K19/00
- IPC分类号: H03K19/00 ; H03K19/0185 ; G11C7/10 ; G11C8/10 ; H03K19/08
摘要:
An impedance calibration circuit includes a first code generation circuit connected to a first reference resistor, and configured to generate a first code for forming a resistance based on the first reference resistor, by using the first reference resistor; a second code generation circuit configured to form a resistance of a second reference resistor less than the resistance of the first reference resistor, based on the first code, and generate a second code by using the second reference resistor; and a target impedance code generation circuit configured to generate a target impedance code based on the first code, the second code, and a target impedance value, and form an impedance having the target impedance value in a termination driver connected to the impedance calibration circuit, based on the target impedance code.