Invention Grant
- Patent Title: IC structure base and inner E/C material on raised insulator, and methods to form same
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Application No.: US16776930Application Date: 2020-01-30
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Publication No.: US11152496B2Publication Date: 2021-10-19
- Inventor: Jagar Singh , Alexander L. Martin , Alexander M. Derrickson
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/02 ; H01L29/08 ; H01L29/735 ; H01L29/737 ; H01L21/8222 ; H01L29/06 ; H01L29/10 ; H01L21/265 ; H01L21/266 ; H01L21/3065 ; H01L21/308 ; H01L21/285 ; H01L29/45
Abstract:
Embodiments of the disclosure provide an integrated circuit (IC) structure, including: a semiconductor base on a first portion of a raised region of an insulative layer; a first inner emitter/collector (E/C) material on a second portion of the raised region of the insulative layer, wherein the inner E/C material is directly horizontally between the semiconductor base and a sidewall of the raised region; and a first outer E/C material on a first non-raised region of the insulative layer, wherein an upper portion of the first outer E/C material is adjacent the first inner E/C material.
Public/Granted literature
- US20210242335A1 IC STRUCTURE BASE AND INNER E/C MATERIAL ON RAISED INSULATOR, AND METHODS TO FORM SAME Public/Granted day:2021-08-05
Information query
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