A method for producing optoelectronic semiconductor components is disclosed. In an embodiment a method includes A) applying radiation-emitting semiconductor chips to an intermediate carrier, wherein the semiconductor chips are volume emitters configured to emit radiation at light exit main sides and on chip side surfaces; B) applying a clear potting permeable to the radiation directly onto the chip side surfaces so that the chip side surfaces are predominantly or completely covered by the clear potting and a thickness of the clear potting in each case decreases monotonically in a direction away from the main light exit sides; C) producing a reflection element so that the reflection element and the clear potting touch on an outer side of the clear potting opposite the chip side surfaces; and D) detaching the semiconductor chips from the intermediate carrier and attaching the semiconductor chips to a component carrier so that the light exit main sides of the semiconductor chips face away from the component carrier.