Invention Grant
- Patent Title: Radiation-emitting semiconductor chip
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Application No.: US16310787Application Date: 2017-06-26
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Publication No.: US11164994B2Publication Date: 2021-11-02
- Inventor: Fabian Kopp , Attila Molnar , Bjoern Muermann , Franz Eberhard
- Applicant: OSRAM OLED GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GmbH
- Current Assignee: OSRAM OLED GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102016112587.3 20160708
- International Application: PCT/EP2017/065715 WO 20170626
- International Announcement: WO2018/007186 WO 20180111
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/46 ; H01L33/14 ; H01L33/20 ; H01L33/32 ; H01L33/62 ; H01L33/08

Abstract:
A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.
Public/Granted literature
- US20190326471A1 Radiation-Emitting Semiconductor Chip Public/Granted day:2019-10-24
Information query
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