Invention Grant
- Patent Title: Thin-film transistor, display device including the same, and method of manufacturing the same
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Application No.: US16705767Application Date: 2019-12-06
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Publication No.: US11171246B2Publication Date: 2021-11-09
- Inventor: SeHee Park , JungSeok Seo , PilSang Yun , Jeyong Jeon , Jaeyoon Park , ChanYong Jeong
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2018-0165362 20181219
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/49 ; H01L29/786 ; H01L29/66 ; H01L29/24

Abstract:
A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.
Public/Granted literature
- US11121260B2 Thin-film transistor, display device including the same, and method of manufacturing the same Public/Granted day:2021-09-14
Information query
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