Provided is a resistive random access memory (RRAM) including at least one memory cell. The at least one memory cell includes a top electrode, a bottom electrode, a data storage layer, an oxygen gettering layer, a first barrier layer, and an oxygen supplying layer. The data storage layer is disposed between the top electrode and the bottom electrode. The oxygen gettering layer is disposed between the data storage layer and the top electrode. The first barrier layer is disposed between the oxygen gettering layer and the data storage layer. The oxygen supplying layer is disposed between the oxygen gettering layer and the top electrode and/or between the oxygen gettering layer and the first barrier layer.