Invention Grant
- Patent Title: Test device for memory, method for detecting hardware failure in memory device, and test apparatus of memory array
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Application No.: US16836928Application Date: 2020-04-01
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Publication No.: US11183261B2Publication Date: 2021-11-23
- Inventor: Hiroki Noguchi , Ku-Feng Lin , Yih Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/38 ; G11C29/36 ; G11C11/16

Abstract:
A testing device for memory includes a memory array and a test apparatus. The test apparatus includes a controller and a pattern generator. The pattern generator generates a background data, a first pattern data, and a second pattern data. The controller sets up the background data to a to-be-tested memory sub-array of the memory sub-arrays, performs a first memory test operation with the to-be-tested memory sub-array according to the first pattern data for detecting an occurrence of a hardware failure of the to-be-tested memory sub-array is occurred during the first memory test operation. The controller performs a second memory test operation with the to-be-tested memory sub-array according to the second pattern data for detecting the occurrence of the hardware failure of the to-be-tested memory sub-array during the second memory test operation in response to the hardware failure of the to-be-tested memory sub-array is not occurred during the first memory test operation.
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