Invention Grant
- Patent Title: Memory system and operating method of memory system
-
Application No.: US16533905Application Date: 2019-08-07
-
Publication No.: US11188415B2Publication Date: 2021-11-30
- Inventor: Beomkyu Shin , Kui-Yon Mun , Sungkyu Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2018-0159269 20181211
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C11/409 ; G06F13/16 ; G11C29/34 ; G11C29/52

Abstract:
A memory system includes a memory device including memory cells, and a controller that performs a write operation, a read operation, and a check operation on the memory device. During the check operation, the controller controls the memory device to read check data from target memory cells of the memory cells by using a check level, compares the check data with original data stored in the target memory cells, and determines a reliability of the target memory cells or the check data based on a result of the comparison.
Public/Granted literature
- US20200183777A1 MEMORY SYSTEM AND OPERATING METHOD OF MEMORY SYSTEM Public/Granted day:2020-06-11
Information query