公开(公告)号：US09967746B2

公开(公告)日：2018-05-08

申请号：US15206536

申请日：2016-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jeong Na ,  Donghyoun Son ,  Inseok Shim ,  Changhoon Kim ,  Sungkyu Park

IPC: H04M3/16 ,  H04W12/06 ,  H04W76/02

CPC classification number: H04W12/06 ,  H04W4/80 ,  H04W76/11 ,  H04W76/14

Abstract: An electronic device comprising: a microphone; a communication circuit; a memory; and at least one processor operatively coupled to the memory, configured to: acquire voice data by using the microphone; identify a user corresponding to the voice data; select an external device based at least in part on an identity of the user; and transmit a connection request to the external device by using the communication circuit.

公开(公告)号：US12013754B2

公开(公告)日：2024-06-18

申请号：US17479067

申请日：2021-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beomkyu Shin ,  Sungkyu Park

IPC: G06F11/10 ,  G06F3/06 ,  G11C29/52 ,  G11B20/18 ,  G11C7/10 ,  G11C11/56 ,  G11C13/00 ,  G11C16/10 ,  G11C29/42

CPC classification number: G06F11/1068 ,  G06F3/0604 ,  G06F3/0659 ,  G06F3/0679 ,  G11C29/52 ,  G06F3/065 ,  G11B2020/1823 ,  G11C7/1006 ,  G11C11/5628 ,  G11C13/0069 ,  G11C16/10 ,  G11C29/42 ,  G11C2211/5646 ,  G11C2211/5647

Abstract: A nonvolatile memory device performs a compare and write operation. The compare and write operation includes reading read data from memory cells, inverting first write data to generate second write data, adding a first flag bit to the first write data to generate third write data and adding a second flag bit to the second write data to generate fourth write data, performing a reinforcement operation on each of the third write data and the fourth write data to generate fifth write data and sixth write data, and comparing the read data with each of the fifth write data and the sixth write data and writing one of the fifth and sixth write data in the memory cells based on a result of the comparison.

公开(公告)号：US11710673B2

公开(公告)日：2023-07-25

申请号：US17376883

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choongbin Yim ,  Dongwook Kim ,  Hyunki Kim ,  Jongbo Shim ,  Jihwang Kim ,  Sungkyu Park ,  Yongkwan Lee ,  Byoungwook Jang

IPC: H01L23/12 ,  H01L23/538

CPC classification number: H01L23/12 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386

Abstract: A semiconductor package including a first package substrate, a first semiconductor chip on the first package substrate, a first conductive connector on the first package substrate and laterally spaced apart from the first semiconductor chip, an interposer substrate on the first semiconductor chip and electrically connected to the first package substrate through the first conductive connector, the interposer substrate including a first portion overlapping the first semiconductor chip and a plurality of upper conductive pads in the first portion, a plurality of spacers on a lower surface of the first portion of the interposer substrate and positioned so as not to overlap the plurality of upper conductive pads in a plan view, and an insulating filler between the interposer substrate and the first package substrate may be provided.

公开(公告)号：US11188415B2

公开(公告)日：2021-11-30

申请号：US16533905

申请日：2019-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beomkyu Shin ,  Kui-Yon Mun ,  Sungkyu Park

IPC: G06F11/10 ,  G11C11/409 ,  G06F13/16 ,  G11C29/34 ,  G11C29/52

Abstract: A memory system includes a memory device including memory cells, and a controller that performs a write operation, a read operation, and a check operation on the memory device. During the check operation, the controller controls the memory device to read check data from target memory cells of the memory cells by using a check level, compares the check data with original data stored in the target memory cells, and determines a reliability of the target memory cells or the check data based on a result of the comparison.

公开(公告)号：US11144388B2

公开(公告)日：2021-10-12

申请号：US16506307

申请日：2019-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beomkyu Shin ,  Sungkyu Park

IPC: G06F11/10 ,  G11C29/52 ,  G06F3/06 ,  G11C29/42 ,  G11C11/56 ,  G11C16/10 ,  G11B20/18 ,  G11C13/00 ,  G11C7/10

Abstract: A nonvolatile memory device performs a compare and write operation. The compare and write operation includes reading read data from memory cells, inverting first write data to generate second write data, adding a first flag bit to the first write data to generate third write data and adding a second flag bit to the second write data to generate fourth write data, performing a reinforcement operation on each of the third write data and the fourth write data to generate fifth write data and sixth write data, and comparing the read data with each of the fifth write data and the sixth write data and writing one of the fifth and sixth write data in the memory cells based on a result of the comparison.

公开(公告)号：US20200183784A1

公开(公告)日：2020-06-11

申请号：US16506307

申请日：2019-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beomkyu Shin ,  Sungkyu Park

IPC: G06F11/10 ,  G11C29/52 ,  G06F3/06

Abstract: A nonvolatile memory device performs a compare and write operation. The compare and write operation includes reading read data from memory cells, inverting first write data to generate second write data, adding a first flag bit to the first write data to generate third write data and adding a second flag bit to the second write data to generate fourth write data, performing a reinforcement operation on each of the third write data and the fourth write data to generate fifth write data and sixth write data, and comparing the read data with each of the fifth write data and the sixth write data and writing one of the fifth and sixth write data in the memory cells based on a result of the comparison.