A word line driving device of a memory device is provided. The word line driving device of the memory device includes a word line, a word line driver, and a conducting line. The word line is disposed on a first metal layer. The word line is connected to a plurality of memory cells in a memory array. The word line driver is coupled to a first node of the word line. The conducting line is disposed on a second metal layer. The first node of the word line is coupled to a first node of the conducting line and a second node of the word line is coupled to a second node of the conducting line. The distance of the second metal layer with respect to a plurality of transistors in the memory device is greater than a distance of the first metal layer with respect to the plurality of transistors in the memory device.