Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US16723041Application Date: 2019-12-20
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Publication No.: US11189583B2Publication Date: 2021-11-30
- Inventor: Sheng-Chau Chen , Shih-Pei Chou , Ming-Che Lee , Kuo-Ming Wu , Cheng-Hsien Chou , Cheng-Yuan Tsai , Yeur-Luen Tu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L21/768
Abstract:
The present disclosure provides a semiconductor structure. The semiconductor structure comprises a semiconductive substrate and an interconnect structure over the semiconductive substrate. The semiconductor structure also comprises a bond pad in the semiconductive substrate and coupled to the metal layer. The bond pad comprises two conductive layers.
Information query
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