Invention Grant
- Patent Title: Single photon avalanche diode
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Application No.: US16818934Application Date: 2020-03-13
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Publication No.: US11189743B2Publication Date: 2021-11-30
- Inventor: Chia-Yu Wei , Yu-Ting Kao , Yen-Liang Lin , Wen-I Hsu , Hsun-Ying Huang , Kuo-Cheng Lee , Hsin-Chi Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/107 ; H01L31/0224 ; H01L31/0216 ; H01L31/18 ; H01L31/02 ; H01L31/0232 ; H01L31/0352

Abstract:
A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.
Public/Granted literature
- US20200212244A1 NOVEL SINGLE PHOTON AVALANCHE DIODE Public/Granted day:2020-07-02
Information query
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