公开(公告)号：US11189743B2

公开(公告)日：2021-11-30

申请号：US16818934

申请日：2020-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu Wei ,  Yu-Ting Kao ,  Yen-Liang Lin ,  Wen-I Hsu ,  Hsun-Ying Huang ,  Kuo-Cheng Lee ,  Hsin-Chi Chen

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0352

Abstract: A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.

公开(公告)号：US20190006548A1

公开(公告)日：2019-01-03

申请号：US16014218

申请日：2018-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Yu-Ting Kao ,  Yen-Liang Lin ,  Wen-I Hsu ,  Hsun-Ying Huang ,  Kuo-Cheng Lee ,  Hsin-Chi Chen

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

Abstract: A photodetector includes: a substrate having a first doping type; a first semiconductor region having a second doping type, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region having the first doping type, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.