Invention Grant
- Patent Title: 3D trench capacitor for integrated passive devices
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Application No.: US16824908Application Date: 2020-03-20
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Publication No.: US11211362B2Publication Date: 2021-12-28
- Inventor: Xin-Hua Huang , Chung-Yi Yu , Yeong-Jyh Lin , Rei-Lin Chu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L23/528 ; H01L27/01 ; H01L23/48 ; H01L21/768 ; H01L25/00

Abstract:
Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.
Public/Granted literature
- US20210296283A1 3D TRENCH CAPACITOR FOR INTEGRATED PASSIVE DEVICES Public/Granted day:2021-09-23
Information query
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