Invention Grant
- Patent Title: Power semiconductor devices with low specific on-resistance
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Application No.: US16877516Application Date: 2020-05-19
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Publication No.: US11227949B2Publication Date: 2022-01-18
- Inventor: Ming Qiao , Longfei Liang , Yilei Lyu , Zhao Qi , Bo Zhang
- Applicant: University of Electronic Science and Technology of China
- Applicant Address: CN Chengdu
- Assignee: University of Electronic Science and Technology of China
- Current Assignee: University of Electronic Science and Technology of China
- Current Assignee Address: CN Chengdu
- Agency: Bayramoglu Law Offices LLC
- Priority: CN202010125476.3 20200227
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/04
Abstract:
A low specific on-resistance (Ron,sp) power semiconductor device includes a power device and a transient voltage suppressor (TVS); wherein the power device comprises a gate electrode, a drain electrode, a bulk electrode, a source electrode and a parasitic body diode, the bulk electrode and the source electrode are shorted, the TVS comprises an anode electrode and a cathode electrode, the drain electrode of the power device and the anode electrode of the TVS are connected by a first metal to form a high-voltage terminal electrode, the source electrode of the power device and the cathode electrode of the TVS are connected by a second metal to form a low-voltage terminal electrode.
Public/Granted literature
- US20210273095A1 Power Semiconductor Devices with Low Specific On-Resistance Public/Granted day:2021-09-02
Information query
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