Power semiconductor devices with low specific on-resistance

    公开(公告)号:US11227949B2

    公开(公告)日:2022-01-18

    申请号:US16877516

    申请日:2020-05-19

    Abstract: A low specific on-resistance (Ron,sp) power semiconductor device includes a power device and a transient voltage suppressor (TVS); wherein the power device comprises a gate electrode, a drain electrode, a bulk electrode, a source electrode and a parasitic body diode, the bulk electrode and the source electrode are shorted, the TVS comprises an anode electrode and a cathode electrode, the drain electrode of the power device and the anode electrode of the TVS are connected by a first metal to form a high-voltage terminal electrode, the source electrode of the power device and the cathode electrode of the TVS are connected by a second metal to form a low-voltage terminal electrode.

Patent Agency Ranking