Invention Grant
- Patent Title: Back end of line metallization
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Application No.: US16840506Application Date: 2020-04-06
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Publication No.: US11244897B2Publication Date: 2022-02-08
- Inventor: Chanro Park , Koichi Motoyama , Kenneth Chun Kuen Cheng , Somnath Ghosh , Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent L. Jeffrey Kelly
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/532 ; H01L21/768 ; H01L23/528 ; H01L21/033

Abstract:
Interconnect structures and methods for forming the interconnect structures generally include a subtractive etching process to form a fully aligned top via and metal line interconnect structure. The interconnect structure includes a top via and a metal line formed of an alternative metal other than copper or tungsten. A conductive etch stop layer is intermediate the top via and the metal line. The top via is fully aligned to the metal line.
Public/Granted literature
- US20210313264A1 BACK END OF LINE METALLIZATION Public/Granted day:2021-10-07
Information query
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