Invention Grant
- Patent Title: Memory cell including multi-level sensing
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Application No.: US15911350Application Date: 2018-03-05
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Publication No.: US11264094B2Publication Date: 2022-03-01
- Inventor: Bruce Querbach , Christopher Connor
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Jordan IP Law, LLC
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C13/00 ; G11C11/408 ; H03K19/0175 ; G11C14/00 ; G11C29/12 ; G11C7/16 ; G11C7/06 ; G11C27/00 ; G11C29/02 ; G11C29/04

Abstract:
An embodiment of a semiconductor apparatus may include technology to convert an analog voltage level of a memory cell of a multi-level memory to a multi-bit digital value, and determine a single-bit value of the memory cell based on the multi-bit digital value. Some embodiments may also include technology to track a temporal history of accesses to the memory cell for a duration in excess of ten seconds, and determine the single-bit value of the memory cell based on the multi-bit digital value and the temporal history. Other embodiments are disclosed and claimed.
Public/Granted literature
- US20190043570A1 MEMORY CELL INCLUDING MULTI-LEVEL SENSING Public/Granted day:2019-02-07
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