Invention Grant
- Patent Title: FinFET device and method of forming same
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Application No.: US17027078Application Date: 2020-09-21
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Publication No.: US11264505B2Publication Date: 2022-03-01
- Inventor: Chia-Ling Chan , Yen-Chun Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/22 ; H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L23/532 ; H01L29/423 ; H01L21/768 ; H01L21/308 ; H01L21/8238 ; H01L21/324
Abstract:
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, forming a first spacer over the dummy gate structure, implanting a first dopant in the fin to form a doped region of the fin adjacent the first spacer, removing the doped region of the fin to form a first recess, wherein the first recess is self-aligned to the doped region, and epitaxially growing a source/drain region in the first recess.
Public/Granted literature
- US20210013337A1 FinFET Device and Method of Forming Same Public/Granted day:2021-01-14
Information query
IPC分类:
