Invention Grant
- Patent Title: Pattern transfer technique and method of manufacturing the same
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Application No.: US16587335Application Date: 2019-09-30
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Publication No.: US11289341B2Publication Date: 2022-03-29
- Inventor: Chue San Yoo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/311 ; H01L23/544 ; H01L21/67 ; H01L21/68 ; H01J37/32
Abstract:
A photo-free lithography process with low cost, high throughput, and high reliability is provided. A template mask is bonded to a production workpiece and comprises a plurality of openings defining a pattern. An etch is performed into the production workpiece, through the plurality of openings, to transfer the pattern of the template mask to the production workpiece. The template mask is de-bonded from the production workpiece. A system for performing the photo-free lithography process is also provided.
Public/Granted literature
- US20200027747A1 PATTERN TRANSFER TECHNIQUE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-01-23
Information query
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