Invention Grant
- Patent Title: Method of controlling on-die termination and memory system performing the same
-
Application No.: US16931933Application Date: 2020-07-17
-
Publication No.: US11302384B2Publication Date: 2022-04-12
- Inventor: Chulung Kim , Joungyeal Kim , Seongheon Yu , Hyunjin Ko , Wooil Kim , Hyeonsoo Sim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2019-0160408 20191205
- Main IPC: G11C11/4093
- IPC: G11C11/4093 ; G11C11/4096 ; G06F13/40 ; G06F13/16 ; H01L25/065 ; H01L25/18

Abstract:
In a method of controlling on-die termination (ODT) in a memory system including a plurality of memory units that shares a data bus to transfer data, ODT circuits of the plurality of memory units are enabled into an initial state, a resistance value of the ODT circuit is set to a first resistance value, of at least one write non-target memory unit among the plurality of memory units during a write operation on a write target memory unit among the plurality of memory units, and a resistance value of the ODT circuit is set to a second resistance value, of at least one read non-target memory unit among the plurality of memory units during a read operation on a read target memory unit among the plurality of memory units.
Public/Granted literature
- US20210174861A1 METHOD OF CONTROLLING ON-DIE TERMINATION AND MEMORY SYSTEM PERFORMING THE SAME Public/Granted day:2021-06-10
Information query
IPC分类: