Invention Grant
- Patent Title: Memory rank design for a memory channel that is optimized for graph applications
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Application No.: US16833322Application Date: 2020-03-27
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Publication No.: US11308006B2Publication Date: 2022-04-19
- Inventor: Byoungchan Oh , Sai Dheeraj Polagani , Joshua B. Fryman
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F13/42 ; G06F12/0879 ; G11C11/4093 ; G11C5/04 ; G11C29/42

Abstract:
An apparatus is described. The apparatus includes a rank of memory chips to couple to a memory channel. The memory channel is characterized as having eight transfers of eight bits of raw data per burst access. The rank of memory chips has first, second and third X4 memory chips. The X4 memory chips conform to a JEDEC dual data rate (DDR) memory interface specification. The first and second X4 memory chips are to couple to an eight bit raw data portion of the memory channel's data bus. The third X4 memory chip to couple to an error correction coding (ECC) information portion of the memory channel's data bus.
Public/Granted literature
- US20200233819A1 MEMORY RANK DESIGN FOR A MEMORY CHANNEL THAT IS OPTIMIZED FOR GRAPH APPLICATIONS Public/Granted day:2020-07-23
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