Invention Grant
- Patent Title: Semiconductor memory devices, memory systems, and methods of operating semiconductor memory devices
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Application No.: US17216160Application Date: 2021-03-29
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Publication No.: US11335431B2Publication Date: 2022-05-17
- Inventor: Kyung-Ryun Kim , Yoon-Na Oh , Hyung-Jin Kim , Hui-Kap Yang , Jang-Woo Ryu
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0036291 20180329,KR10-2018-0079345 20180709,KR10-2018-0119317 20181005,KR10-2019-0011563 20190130
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C8/12 ; G11C29/24 ; G11C29/44 ; G11C29/04
Abstract:
A method includes replacing an address of a first normal memory cell in a first column of a first memory block with a destination address that is an address of a second normal memory cell in a second column of the first memory block, and reassigning the address of the second normal memory cell in the second column of the first memory block to an address of a first redundancy memory cell in a redundancy block of the memory device.
Public/Granted literature
- US20210233604A1 SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS, AND METHODS OF OPERATING SEMICONDUCTOR MEMORY DEVICES Public/Granted day:2021-07-29
Information query
