Invention Grant
- Patent Title: Semiconductor devices and methods of manufacture
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Application No.: US17071554Application Date: 2020-10-15
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Publication No.: US11342181B2Publication Date: 2022-05-24
- Inventor: Tzu-Ang Chao , Gregory Michael Pitner , Tse-An Chen , Lain-Jong Li , Yu Chao Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; H01L51/00 ; H01L29/78 ; H01L29/423 ; H01L29/40 ; H01L29/66 ; H01L51/05 ; H01L51/56 ; H01L51/10 ; H01L29/786
Abstract:
A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
Public/Granted literature
- US20210358750A1 Semiconductor Devices and Methods of Manufacture Public/Granted day:2021-11-18
Information query
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