Invention Grant
- Patent Title: Trench formation scheme for programmable metallization cell to prevent metal redeposit
-
Application No.: US16408898Application Date: 2019-05-10
-
Publication No.: US11342379B2Publication Date: 2022-05-24
- Inventor: Fu-Ting Sung , Chung-Chiang Min , Yuan-Tai Tseng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00 ; G11C5/06 ; G11C13/00
Abstract:
Some embodiments relate to a memory device. The memory device includes a top electrode overlying a bottom electrode. A data storage layer overlies the bottom electrode. The bottom electrode cups an underside of the data storage layer. The top electrode overlies the data storage layer. A top surface of the bottom electrode is aligned with a top surface of the top electrode.
Information query
IPC分类:
