Invention Grant
- Patent Title: Method of forming oxide semiconductor field effect transistor
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Application No.: US17140114Application Date: 2021-01-03
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Publication No.: US11342465B2Publication Date: 2022-05-24
- Inventor: Chien-Ming Lai , Yen-Chen Chen , Jen-Po Huang , Sheng-Yao Huang , Hui-Ling Chen , Qinggang Xing , Ding-Lung Chen , Li Li Ding , Yao-Hung Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201811041792.1 20180907
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/786 ; H01L29/66 ; H01L29/51 ; H01L29/423 ; H01L29/49 ; H01L29/10

Abstract:
An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
Public/Granted literature
- US20210126131A1 METHOD OF FORMING OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR Public/Granted day:2021-04-29
Information query
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