-
公开(公告)号：US12027629B2
公开(公告)日：2024-07-02
申请号：US18103505
申请日：2023-01-31
发明人： Chien-Ming Lai , Yen-Chen Chen , Jen-Po Huang , Sheng-Yao Huang , Hui-Ling Chen , Qinggang Xing , Ding-Lung Chen , Li Li Ding , Yao-Hung Liu
IPC分类号： H01L29/786 , H01L29/10 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/1037 , H01L29/4236 , H01L29/4966 , H01L29/51 , H01L29/66742
摘要： An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
-
公开(公告)号：US20210336059A1
公开(公告)日：2021-10-28
申请号：US17367637
申请日：2021-07-06
发明人： Chien-Ming Lai , Yen-Chen Chen , Jen-Po Huang , Sheng-Yao Huang , Hui-Ling Chen , Qinggang Xing , Ding-Lung Chen , Li Li Ding , Yao-Hung Liu
IPC分类号： H01L29/786 , H01L29/66 , H01L29/51 , H01L29/423 , H01L29/49 , H01L29/10
摘要： An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
-
公开(公告)号：US11133418B2
公开(公告)日：2021-09-28
申请号：US16413425
申请日：2019-05-15
发明人： Yen-Chen Chen , Xiao Wu , Hai Tao Liu , Ming Hua Du , Shouguo Zhang , Yao-Hung Liu , Chin-Fu Lin , Chun-Yuan Wu
IPC分类号： H01L29/786 , H01L29/24 , H01L29/66 , H01L29/45 , H01L29/417
摘要： A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
-
公开(公告)号：US20190198334A1
公开(公告)日：2019-06-27
申请号：US15853862
申请日：2017-12-25
发明人： Shouguo Zhang , Hai Tao Liu , Ming Hua Du , Yen-Chen Chen
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/31
摘要： A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.
-
公开(公告)号：US20170148891A1
公开(公告)日：2017-05-25
申请号：US14951446
申请日：2015-11-24
发明人： Kuo-Chih Lai , Yun-Tzu Chang , Wei-Ming Hsiao , Nien-Ting Ho , Shih-Min Chou , Yang-Ju Lu , Ching-Yun Chang , Yen-Chen Chen , Kuan-Chun Lin , Chi-Mao Hsu
CPC分类号： H01L29/513 , H01L21/823821 , H01L21/823842 , H01L21/845 , H01L27/1211 , H01L29/401 , H01L29/4966 , H01L29/517
摘要： A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
-
公开(公告)号：US11342465B2
公开(公告)日：2022-05-24
申请号：US17140114
申请日：2021-01-03
发明人： Chien-Ming Lai , Yen-Chen Chen , Jen-Po Huang , Sheng-Yao Huang , Hui-Ling Chen , Qinggang Xing , Ding-Lung Chen , Li Li Ding , Yao-Hung Liu
IPC分类号： H01L29/76 , H01L29/786 , H01L29/66 , H01L29/51 , H01L29/423 , H01L29/49 , H01L29/10
摘要： An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
-
公开(公告)号：US20200083380A1
公开(公告)日：2020-03-12
申请号：US16154644
申请日：2018-10-08
发明人： Chien-Ming Lai , Yen-Chen Chen , Jen-Po Huang , Sheng-Yao Huang , Hui-Ling Chen , Qinggang Xing , Ding-Lung Chen , Li Li Ding , Yao-Hung Liu
IPC分类号： H01L29/786 , H01L29/66 , H01L29/10 , H01L29/423 , H01L29/49 , H01L29/51
摘要： An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
-
公开(公告)号：US10340391B2
公开(公告)日：2019-07-02
申请号：US15637773
申请日：2017-06-29
发明人： Yen-Chen Chen , Xiao Wu , Hai Tao Liu , Ming Hua Du , Shouguo Zhang , Yao-Hung Liu , Chin-Fu Lin , Chun-Yuan Wu
IPC分类号： H01L29/10 , H01L29/12 , H01L21/16 , H01L21/44 , H01L29/786 , H01L29/24 , H01L29/66 , H01L29/45
摘要： A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
-
公开(公告)号：US20180261675A1
公开(公告)日：2018-09-13
申请号：US15453351
申请日：2017-03-08
发明人： Shih-Min Chou , Yun-Tzu Chang , Wei-Ning Chen , Wei-Ming Hsiao , Chia-Chang Hsu , Kuo-Chih Lai , Yang-Ju Lu , Yen-Chen Chen , Chun-Yao Yang
IPC分类号： H01L29/423 , H01L29/06 , H01L29/49 , H01L29/51 , H01L21/02 , H01L21/28 , H01L21/762 , H01L27/088 , H01L27/092
摘要： A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
-
公开(公告)号：US10074725B1
公开(公告)日：2018-09-11
申请号：US15453351
申请日：2017-03-08
发明人： Shih-Min Chou , Yun-Tzu Chang , Wei-Ning Chen , Wei-Ming Hsiao , Chia-Chang Hsu , Kuo-Chih Lai , Yang-Ju Lu , Yen-Chen Chen , Chun-Yao Yang
IPC分类号： H01L29/76 , H01L29/94 , H01L29/423 , H01L29/06 , H01L29/49 , H01L29/51 , H01L21/02 , H01L21/28 , H01L21/762 , H01L27/088 , H01L27/092 , H01L21/8238 , H01L21/8234
摘要： A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
-
-
-
-
-
-
-
-
-
搜索结果
31 条记录 (耗时 0.015 秒)
