Invention Grant
- Patent Title: Method, device and system for non-destructive detection of defects in a semiconductor die
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Application No.: US16881025Application Date: 2020-05-22
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Publication No.: US11346818B2Publication Date: 2022-05-31
- Inventor: Mario Pacheco , Odissei Touzanov , Jacob Woolsey , Deepak Goyal
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Viering, Jentschura & Partner MBB
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01N29/22 ; G01N29/04

Abstract:
According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.
Public/Granted literature
- US20210364474A1 METHOD, DEVICE AND SYSTEM FOR NON-DESTRUCTIVE DETECTION OF DEFECTS IN A SEMICONDUCTOR DIE Public/Granted day:2021-11-25
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