- 专利标题： Method of manufacturing radio frequency interconnections
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申请号： US17091585申请日： 2020-11-06
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公开(公告)号： US11375609B2公开(公告)日： 2022-06-28
- 发明人: Thomas V. Sikina , James E. Benedict , John P. Haven , Andrew R. Southworth , Semira M. Azadzoi
- 申请人： RAYTHEON COMPANY
- 申请人地址： US MA Waltham
- 专利权人： RAYTHEON COMPANY
- 当前专利权人： RAYTHEON COMPANY
- 当前专利权人地址： US MA Waltham
- 代理机构： Lando & Anastasi, LLP
- 主分类号： H05K3/00
- IPC分类号： H05K3/00 ; H05K1/02 ; H05K1/14 ; H05K3/04 ; H05K3/36 ; H05K3/40 ; H01P3/08 ; H05K3/46
摘要：
A radio frequency connector includes a substrate, a first ground plane disposed upon the substrate, a signal conductor having a first contact point, with the first contact point being configured to electrically mate with a second contact point, and a first ground boundary configured to electrically mate with a second ground boundary, with the first ground boundary being formed as an electrically continuous conductor within the substrate.
公开/授权文献
- US20210059043A1 SNAP-RF INTERCONNECTIONS 公开/授权日：2021-02-25
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