Invention Grant
- Patent Title: Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process
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Application No.: US16767336Application Date: 2018-12-05
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Publication No.: US11377624B2Publication Date: 2022-07-05
- Inventor: Jhih Jheng Ke , Andreas Klipp , Yi Ping Cheng , Joannes Theodorus Valentinus Hoogboom
- Applicant: BASF SE
- Applicant Address: DE Ludwigshafen am Rhein
- Assignee: BASF SE
- Current Assignee: BASF SE
- Current Assignee Address: DE Ludwigshafen am Rhein
- Agency: Armstrong Teasdale LLP
- Priority: EP17206097 20171208
- International Application: PCT/EP2018/083684 WO 20181205
- International Announcement: WO2019/110681 WO 20190613
- Main IPC: C11D7/08
- IPC: C11D7/08 ; C11D3/24 ; C11D3/00 ; C11D3/20 ; C11D3/30 ; C11D3/34 ; C11D11/00 ; H01L21/02
Abstract:
A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.
Public/Granted literature
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